Nitrogen as background gas in pulsed-laser deposition growth of indium tin oxide films at room temperature

Thin Solid Films

Volumn 429, Issue 1-2, 2003, Pages 220-224

  Morales Paliza, M A ^a,b   Huang, M B ^c   Feldman, L C ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b PONTIFICIA UNIVERSIDAD CATÓLICA DEL PERÚ   (Peru)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Electrical properties and measurements; Indium tin oxide; Laser ablation; Rutherford backscattering spectrometry

Indexed keywords

GASES; INDIUM COMPOUNDS; NITROGEN; PULSED LASER DEPOSITION; SUBSTRATES; THERMAL EFFECTS;

ROOM TEMPERATURE;

THIN FILMS;

EID: 0038636427     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00159-7     Document Type: Article

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