Physical-chemical evolution upon thermal treatments of Al2O3, HfO2 and Al/Hf composite materials deposited by ALCVD™

Materials Research Society Symposium - Proceedings

Volumn 745, Issue , 2002, Pages 149-154

  Crivelli, B ^a   Alessandri, M ^a   Alberici, S ^a   Cazzaniga, F ^a   Dekadjevi, D ^b   Maes, J W ^c   Ottaviani, G ^d   Pavia, G ^a   Queirolo, G ^a   Santucci, S ^e   Zanderigo, F ^a  

^a STMICROELECTRONICS   (Italy)

^b LABORATORIO MDM   (Italy)

^c ASM International   (Belgium)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^e UNIVERSITY OF L'AQUILA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; HEAT TREATMENT; PHASE SEPARATION; PHASE TRANSITIONS; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY; VACUUM;

PHYSICAL-CHEMICAL EVOLUTION;

COMPOSITE MATERIALS;

EID: 0038632156     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-745-n5.3     Document Type: Conference Paper

References (3)

1. M. Copel, E. Cartier, E.P. Gusev, S. Guha, K. Bojarczuk, M. Poppeler, Appl. Phys. Lett 78, 2670 (2001)
2. B.W. Busch, W.H.Schulte, E.Garfunkel, T.Gustafsson, W.Qi, R.Nieh, J.Lee, Phys. Rev. B 62, 290 (2000)
3. 2 and Advanced Dielectric, Trento, ITALY, 2002