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IEEE Microwave and Wireless Components Letters

Volumn 13, Issue 3, 2003, Pages 96-98

GaAs HEMT low-noise cryogenic amplifiers from C-band to X-band with 0.7-K/GHz noise temperature

(2) Risacher, Christophe a Belitsky, Victor a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

Cryogenic amplifier; GaAs (high electron mobility transistor) HEMT; Gain stability

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; CRYOGENICS; ELECTRIC IMPEDANCE; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; RESISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; TELESCOPES;

CRYOGENIC AMPLIFIER; GAIN STABILITY; LOW NOISE AMPLIFIER;

MICROWAVE AMPLIFIERS;

EID: 0038577081 PISSN: 15311309 EISSN: None Source Type: Journal
DOI: 10.1109/LMWC.2003.810116 Document Type: Letter

Times cited : (14)

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