Low-energy ion-beam induced effects in Al(1 0 0) surface studied using Rutherford backscattering and channeling

Applied Surface Science

Volumn 214, Issue 1-4, 2003, Pages 338-350

  Ramana, C V ^a   Choi, B S ^a   Smith, R J ^a  

^a MONTANA STATE UNIVERSITY   (United States)

Author keywords

Aluminum; He implantation; Ion channeling; LEIS; Metal surfaces; Sputtering

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; ANNEALING; HELIUM; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; POSITIVE IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS;

METAL SURFACES;

SURFACE STRUCTURE;

EID: 0038547957     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00518-X     Document Type: Article

References (30)

1. van der Veen J.F. Surf. Sci. Rep. 5:1985;199.
2. L.C. Feldman, J.W. Mayer, Fundamentals of Surface and Thin Film Analysis, North-Holland, Amsterdam, 1986.
3. Saleh A.A., Shutthanandan V., Shivaparan N.R., Smith R.J., Tran T.T., Chambers S.A. Phys. Rev. B. 56:1997;9841.
4. A.W. Czanderna (Ed.), Methods of Surface Analysis, Elsevier, New York, 1975.
5. Neihus H., Heiland W., Taglauer E. Surf. Sci. Rep. 17:1993;213.
6. J.W. Rabalais (Ed.), Low Energy Ion-Surface Interactions, Wiley Series in Ion Chemistry and Physics, Wiley, Chichester, UK, 1994.
7. Polman A. J. Appl. Phys. 82:1997;1.
8. Chiang, N.W. Geis, L. Pfeiffer (Eds.), Semiconductor-on-Insulator and Thin Film Transistor Technology, vol. 53, Materials Research Society, Pittsburgh, 1986.
9. Smentkowski V.S. Prog. Surf. Sci. 64:2000;1. and references there in.
10. Matsui S., Ochiai Y. Nanotechnology. 7:1996;247.
11. O. Auciello, R. Kelly (Eds.), Ion Bombardment Modification of Surfaces: Fundamentals and Applications, Elsevier, New York, 1984.
12. Auciello O., Kingon A.I., Krupanidhi S.B. MRS Bull. 21:1996;25.
13. Park R. J. Appl. Phys. 37:1966;295.
14. Verheij L.K. Surf. Sci. 114:1982;667.
15. Wehner G.K. J. Appl. Phys. 26:1955;1056.
16. M.T. Robinson, in: R. Behrish (Ed.), Sputtering by Particle Bombardment I, Springer, Berlin, 1981.
17. J.F. Zeigler, J.P. Biersak, U. Littmark, The Stopping and Range of Ions in Solids, Pergamon Press, New York, 1985.
18. Smith R.J., Whang C.N., Mingde X., Worthington M., Hennesey C., Kim M., Holland N. Rev. Sci. Instrum. 58(12):1987;2284.
19. Barret J.H. Phys. Rev. B. 3:1971;1527.
20. Frenken J.W., Tromp R.M., van der Veen J.F. Nucl. Instrum. Methods B. 17:1986;334.
21. J.R. Tesmer, M. Nastasi (Eds.), Handbook of Modern Ion Beam Materials Analysis, Materials Research Society, Pittsburgh, 1995.
22. Jacobson R., Wehner G.K. J. Appl. Phys. 36:1965;2674.
23. Lee J.C., Jeong C.S., Kang H.J., Kim H.K., Moon D.W. Appl. Surf. Sci. 100-101:1996;97.
24. Michely T., Comsa G. J. Vac. Sci. Technol. B. 9:1991;862.
25. J.S. Koehler, in: A. Seeger, D. Schumacher, W. Schilling, J. Diehl (Eds.), Vacancies and Interstitials in Metals, North-Holland, Amsterdam, 1970.
26. J.S. Koehler, in: A. Seeger, D. Schumacher, W. Schilling, J. Diehl (Eds.), Vacancies and Interstitials in Metals, North-Holland, Amsterdam, 1970.
27. Evans J.H. J. Nucl. Mater. 61:1976;1.
28. Michely T., Comsa G. Phys. Rev. B. 44:1991;8411.
29. Moon D.W., Ha Y., Kim H.K., Kim K.J., Kim H.S., Lee J.Y., Kim S. Appl. Surf. Sci. 150:1999;235.
30. Webb R.P., Harrison D.E. Jr. Phys. Rev. Lett. 50:1983;1478.