Contribution of light holes to the Hall effect for the complex valence band in germanium and its dependence on doping level

Semiconductors

Volumn 32, Issue 7, 1998, Pages 720-728

  Alekseenko, M V ^a   Zabrodskii A G ^a   Shterengas, L M ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038533062     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187492     Document Type: Article

References (24)

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