Ultrafast optoelectronic sample-and-hold using low-temperature-grown GaAs MSM

IEEE Photonics Technology Letters

Volumn 15, Issue 5, 2003, Pages 724-726

  Urata, Ryohei ^a   Takahashi, Ryo ^b   Sabnis, Vijit A ^c   Miller, David A B ^a   Harris Jr , James S ^c  

^a STANFORD UNIVERSITY   (United States)

^b NTT CORPORATION   (Japan)

^c Stanford University   (United States)

Author keywords

Analog to digital (A D) conversion; Low temperature (LT) grown GaAs; Metal semiconductor metal (MSM) devices; Optical data processing; Sample and hold circuits

Indexed keywords

ANALOG TO DIGITAL CONVERSION; BANDWIDTH; JITTER; LOW TEMPERATURE EFFECTS; OPTICAL DATA PROCESSING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SWITCHES;

LINEARITY; METAL SEMICONDUCTOR METAL SWITCHES; SAMPLE AND HOLD CIRCUITS;

OPTOELECTRONIC DEVICES;

EID: 0038529614     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.810252     Document Type: Article

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