MBE growth and optical properties of ZnSeO

Materials Research Society Symposium - Proceedings

Volumn 744, Issue , 2002, Pages 93-98

  Nabetani, Y ^a   Mukawa, T ^a   Ito, Y ^a   Kato, T ^a   Matsumoto, T ^a  

^a UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; ENERGY GAP; HIGH ENERGY ELECTRON DIFFRACTION; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

BAND GAP ENERGY; ZINC BLENDE; ZINC SELENIUM OXIDE ALLOY;

ZINC ALLOYS;

EID: 0038488568     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. J.C. Phillips, in Bonds and Bands in Semiconductors (Academic Press, New York, 1973), p. 54.
2. M. Weyers, M. Sato, and H. Ando, Jpn. J. Appl. Phys. part 2 31, L853 (1992).
3. M. Kondow, K. Uomi, K. Hosomi, and T. Mozume, Jpn. J. Appl. Phys. part 2 33, L1056 (1994).
4. A.B.M. Almamum Ashrafi, A. Ueta, A. Avramescu, H. Kumano, and I. Suemune, Appl. Phys. Lett. 76, 550 (2000).
5. E. Jaffe and A.C. Hess, Phys. Rev. B48, 7903 (1993).
6. K. Akimoto, T. Miyajima, and Y. Mori, Phys. Rev. B39, 3138 (1989).