On the feasibility of application of Class E RF power amplifiers in UMTS

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn 1, Issue , 2003, Pages

  Milosevic, Dusan ^a   Van der Tang, Johan ^a   Van Roermund, Arthur ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; HETEROJUNCTION BIPOLAR TRANSISTORS; MOBILE TELECOMMUNICATION SYSTEMS;

POWER AMPLIFICATION;

POWER AMPLIFIERS;

EID: 0038452367     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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2. N. O. Sokal, "Class-E switching-mode high-efficiency tuned RF/microwave power amplifier: improved design equations," IEEE MTT-S Int. Microwave Symp. Digest, 2000, vol. 2, pp. 779-782.
3. F. H. Raab, "Idealized operation of the class E tuned power amplifier," IEEE Transactions on Circuits and Systems, vol. CAS-24, no. 12, pp. 725-735, December 1977.
4. G. K. Wong and S. I. Long, High efficiency bipolar power amplifers, Final Report 1997-98 for MICRO Project 97-104, see www.ucop.edu/research/micro/97_98/97_104.pdf
5. D. K. Choi and S. I. Long, "A physically based analytic model of FET Class-E power amplifiers - designing for maximum PAE," IEEE Transactions on Microwave Theory and Techniques, vol. 47, no. 9, pp. 1712-1720, September 1999.
6. C. Yoo and Q. Huang, "A common-gate switched 0.9-W class-E power amplifier with 41 % PAE in 0.25-μm CMOS," IEEE J. Solid-State Circuits, vol. 36, no. 5, pp. 823-830, May 2001.
7. S. C. Cripps, RF Power Amplifiers for Wireless Communications, Artech House, 1999.