Intensity-dependent reflectance and transmittance of semiconductor periodic structures

IEEE Journal of Quantum Electronics

Volumn 39, Issue 7, 2003, Pages 924-930

  Brzozowski, Lukasz ^a   Sukhovatkin, Vladimir ^a   Sargent, Edward Ted H ^a   Spring Thorpe, Anthony J ^b,c   Extavour, Marcius ^a,b  

^a UNIVERSITY OF TORONTO   (Canada)

^b NORTEL NETWORKS   (Canada)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

All optical elements; Kerr nonlinearity; Nonlinear optics; Nonlinear periodic structures; Saturation of absorption; Semiconductor multi quantum wells

Indexed keywords

BRAGG CELLS; DIFFRACTION; EPITAXIAL GROWTH; LIGHT ABSORPTION; NONLINEAR OPTICS; OPTICAL KERR EFFECT; REFRACTIVE INDEX; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

BRAGG DIFFRACTION; BRAGG PERIODIC OPTICAL ELEMENTS; INTENSITY DEPENDENT REFLECTANCE; INTENSITY DEPENDENT TRANSMITTANCE; NONLINEAR PERIODIC STRUCTURES; SEMICONDUCTOR PERIODIC STRUCTURES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0038444316     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.813195     Document Type: Article

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