Design of a CMOS image sensor with pixel-level ADC in 0.35 μm proccess

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn 2, Issue , 2003, Pages

  Hashemi, F ^a   Hadidi, Kh ^a   Khoei, A ^a  

^a URMIA UNIVERSITY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG TO DIGITAL CONVERSION; CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; TRANSISTORS;

SENSOR CORES;

IMAGE SENSORS;

EID: 0038422018     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. S. Mendis, S. Kemeny, and E. Possum, "A 128 × 128 CMOS active pixel for highly integrated imaging systems," in IEEE IEDM Tech. Dig. San Jose, CA, Dec. 1993, pp. 583-586.
3. D. Yang, B. Fowler, and A. El Gamal, "A Nyquist-Rate Pixel-Level ADC for CMOS Image Sensors," in IEEE Journal of Solid State Circuits, 34(3): 348-355, March 1990.
4. B. Fowler, A. El Gamal, and D. Yang, "Techniques for pixel level analog to digital conversion," in Proc. SPIE, Orlando, FL, Apr. 1998, vol. 3360, pp. 2-12; and in Proc. AeroSense, to be published.
5. B. Razavi, Design of Analog CMOS Integrated Circuits, New York: MC Grow-Hill, 2001.