Light-intensity dependence of photocreated defects in hydrogenated amorphous silicon-nitrogen alloy films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 3 A, 2003, Pages

  Kumeda, Minoru ^a   Shimada, Masaki ^a,b   Kimura, Susumu ^a   Morimoto, Akiharu ^a   Shimizu, Tatsuo ^a  

^a KANAZAWA UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Dangling bonds; ESR; Light intensity dependence; Silicon nitrogen alloy films; Staebler Wronski effect

Indexed keywords

LIGHT ABSORPTION; NITROGEN; OPTICAL VARIABLES MEASUREMENT; PARAMAGNETIC RESONANCE; SILICON ALLOYS;

LIGHT INTENSITY DEPENDENCE; NEUTRAL DANGLING BONDS; PHOTOCREATION; SILICON-NITROGEN ALLOY FILMS; STAEBLER-WRONSKI EFFECT;

AMORPHOUS SILICON;

EID: 0038398907     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l255     Document Type: Letter

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