메뉴 건너뛰기




Volumn 4980, Issue , 2003, Pages 106-113

A new SEM/FIB crossbeam inspection tool for high resolution materials and device characterization

Author keywords

Analysis; Deposition; Device modification; Failure analysis; FIB; Inspection; Metrology; SEM; Semiconductor; TEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; FAILURE ANALYSIS; HIGH RESOLUTION ELECTRON MICROSCOPY; METALLOGRAPHIC MICROSTRUCTURE; MILLING (MACHINING); SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; WAVELENGTH DISPERSIVE SPECTROSCOPY;

EID: 0038397357     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476340     Document Type: Conference Paper
Times cited : (5)

References (5)
  • 1
    • 23044530827 scopus 로고    scopus 로고
    • A new high resolution field emission SEM with variable pressure capabilities
    • Long Beach, California, August 5-9
    • P. Gnauck, V. Drexel, J. Greiser "A new high resolution field emission SEM with variable pressure capabilities" Microscopy and Microanalysis 2002, Long Beach, California, August 5-9, 2001
    • (2001) Microscopy and Microanalysis 2002
    • Gnauck, P.1    Drexel, V.2    Greiser, J.3
  • 2
    • 0005017909 scopus 로고    scopus 로고
    • A new approach to materials characterization using low pressure and low voltage field emission scanning electron microscopy
    • Mühlheim
    • P. Gnauck, J. Greiser: "A new approach to materials characterization using low pressure and low voltage field emission scanning electron microscopy" DVM-Bericht 519, Mühlheim 2000, pp. 89-96.
    • (2000) DVM-Bericht , vol.519 , pp. 89-96
    • Gnauck, P.1    Greiser, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.