Strain-balanced In0.62Ga0.38As/In0.47Ga0.53As(InP) quantum well cell for thermophotovoltaics

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 1234-1237

  Rohr, Carsten ^a   Connolly, James P ^a   Barnham, Keith W J ^a   Mazzer, Massimo ^b   Button, Chris C ^c   Clark, Janice ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b Istituto Nuovi Materiali per l'Elettronica   (Italy)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; GALLIUM ALLOYS; HIGH PASS FILTERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

INTERCONNECTED MODULES; LOWER TEMPERATURES; QUANTUM WELL CELLS; SELECTIVE EMITTERS; SPECTRAL RESPONSE; SYSTEM EFFICIENCY; THERMOPHOTOVOLTAIC APPLICATIONS; THERMOPHOTOVOLTAICS;

GALLIUM;

EID: 0038389883     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916112     Document Type: Conference Paper

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