An FTIR study of hexamethylenetetramine in porous silicon

Physica Status Solidi (A) Applied Research

Volumn 197, Issue 1, 2003, Pages 158-162

  Yakovlev, V A ^a   Valentini, V ^b,c   Mattei, G ^b  

^a INSTITUTE OF SPECTROSCOPY   (Russian Federation)

^b CNR   (Italy)

^c UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; AMINES; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; OXIDATION; POROSITY; SILICON WAFERS; VAPORS;

FABRY-PEROT STRUCTURE; HEXAMETHYLENETETRAMINE; PARTIAL OXIDATION; UROTROPIN;

POROUS SILICON;

EID: 0038377224     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306492     Document Type: Conference Paper

References (8)

1. Z. C. Feng and R. Tsu, Porous Silicon, (World Scientific, Singapore, 1994).
2. J. C. Vial and J. Derrien, Porous Silicon Science and Technology, (Springer-Verlag, Berlin, Heidelberg and Les Editions de Paris, Les Ulis, 1995).
3. L. Canham, Properties of Porous Silicon, EMIS 18, (INSPEC, London, 1997).
4. G. Mattei, E. V. Alieva, J. E. Petrov, and V. A. Yakovlev, Surf. Sci. 427-428, 1235 (1999).
5. G. Mattei, V. Valentini, and V. A. Yakovlev, Surf. Sci. 502-503, 58 (2002).
6. J. Salonen, V. P. Lehto, and E. Laine, Appl. Surf. Sci. 120, 191 (1997).
7. Y. H. Ogata T. Tsuboi, T. Sakka, and S. Naito, J. Porous Mater. 7, 63 (2000).
8. F. A. Cotton and G. Wilkinson, Advanced Inorganic Chemistry, IV Edition, (John Wiley and Sons, New York, Chichester, Brisbane, Toronto 1980) pp. 247-249 and 383-385.