Structure and morphology of CuGaS2 thin films

Thin Solid Films

Volumn 431-432, Issue , 2003, Pages 94-98

  Branch, M S ^a   Berndt, P R ^a   Botha, J R ^a   Leitch, A W R ^a   Weber, J ^b  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

CuGaS2; CuS; Molecularity; Raman; Vacuum deposition

Indexed keywords

COPPER COMPOUNDS; CRYSTAL STRUCTURE; EVAPORATION; FILM GROWTH; MORPHOLOGY; RAMAN SCATTERING; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS;

VACUUM DEPOSITION;

THIN FILMS;

EID: 0038356688     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00208-6     Document Type: Conference Paper

References (13)

1. Shirakata S., Saiki K., Isomura S. J. Appl. Phys. 68:1990;1.
2. Bodnar I.V., Orlova N.S. Phys. Stat. Sol. (a). 78:1983;K59.
3. Sze S.M. Semiconductor Devices - Physics and Technology. second ed. 1981;848 Wiley, New York.
4. Harada Y., Nakanishi H., Chichibu S. J. Appl. Phys. 89:2001;5406.
5. E.I. Rogacheva, Proceedings of the 11th International Conference on Ternary and Multinary Compounds, ICTMC-11, Salford, 1997, Inst. Phys. Conf. Ser. No. 152, Section A: Crystal Growth and Characterisation, 1998, p. 155.
6. Smith J.V. Fink Inorganic Index to the Powder Diffraction File. 1965;American Society for Testing Material, Philadelphia.
7. Oishi K., Kobayashi S., Ohta S., Tsuboi N., Kaneko F. J. Crystal Growth. 177:1997;88.
8. Kokta M., Carruthers J.R., Grasso M., Kasper H.M., Tell B. J. Electron. Mater. 5:1976;69.
9. Davis J.R. ASM Metals Handbook. tenth ed. 1990;177 ASM International, New York.
10. T. Honda, K. Hara, J. Yoshino, H. Kukimoto, Proceedings of the 11th International Conference on Ternary and Multinary Compounds, ICTMC-11, Salford, 1997, Inst. Phys. Conf. Ser. No. 152, Section B: Thin Film Growth and Characterisation, 1998, p. 373.
11. Julien C., Barnier S. Mater. Sci. Eng. B. 86:2001;152.
12. Gonzales J., Moya E., Chervin J.C. Phys. Rev. B. 54:1996;4707.
13. Bairamov B.H., Aydinli A., Bodnar I.V., Rud Y.V., Nogoduyko V.K., Toporov V.V. J. Appl. Phys. 80:1996;10.