Erratic bits in flash memories under Fowler-Nordheim programming

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2041-2043

  Chimenton, Andrea ^a   Pellati, Paolo ^a   Olivo, Piero ^a  

^a UNIVERSITY OF FERRARA   (Italy)

Author keywords

Channel hot electron; Flash memory; Fowler Nordheim tunneling; Threshold voltage; Writing operation

Indexed keywords

BIT ERROR RATE; COMPUTER SIMULATION; ELECTRON TUNNELING; GATES (TRANSISTOR); INTERFACES (MATERIALS); MORPHOLOGY; STATISTICAL METHODS; THRESHOLD VOLTAGE;

CHANNEL HOT ELECTRONS; ERASING ERRATIC BITS; ERRATIC BITS; FOWLER-NORDHEIM PROGRAMMING;

FLASH MEMORY;

EID: 0038348019     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2041     Document Type: Article

References (4)

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