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Volumn 79, Issue 1, 1996, Pages 175-178

Improved hydrogen depth profiles with in-chamber annealing of hydrogenated amorphous silicon thin films

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0038331482     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360927     Document Type: Article
Times cited : (1)

References (25)
  • 10
    • 0040960946 scopus 로고
    • edited by M. Kastner, G. Thomas, and S. Ovshinsky Plenum, New York
    • D. E. Carlson, in Disordered Semiconductors, edited by M. Kastner, G. Thomas, and S. Ovshinsky (Plenum, New York, 1987), p. 613.
    • (1987) Disordered Semiconductors , pp. 613
    • Carlson, D.E.1
  • 14
    • 0021552266 scopus 로고
    • edited by J. I. Pankove Academic, New York
    • P. J. Zanzucchi, in Semiconductors and Semimetals, edited by J. I. Pankove (Academic, New York, 1984), Vol. 21B, p. 113.
    • (1984) Semiconductors and Semimetals , vol.21 B , pp. 113
    • Zanzucchi, P.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.