Characterization of 128x192 Si:Ga focal plane arrays: Study of nonuniformity, stability of its correction, and application for the CRYSTAL camera

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3379, Issue , 1998, Pages 235-248

  Suffis, Sabine ^a   Caes, Marcel ^a   Déliot, Philippe ^a   Deschamps, Joel ^a   Tauvy, Michel ^a  

^a ONERA   (France)

Author keywords

Correction; Focal plane array; Infrared; Nonuniformity; Si:Ga

Indexed keywords

CAMERAS; ELECTRIC POWER FACTOR CORRECTION; FOCUSING; INFRARED DETECTORS; INFRARED RADIATION;

EXTRINSIC PHOTOCONDUCTOR; FIXED PATTERN NOISE; GENERAL ARCHITECTURES; NONUNIFORMITY; NONUNIFORMITY CORRECTION; PIXEL NON-UNIFORMITY; TEMPORAL STABILITY; THERMOGRAPHIC ANALYSIS;

FOCAL PLANE ARRAYS;

EID: 0038330010     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.317591     Document Type: Conference Paper

References (3)

1. F. Rothan, I. Bischoff, G. Chamming's, M. Ravetto, M. Vilain, «Development of Si:Ga/DVR l28x192 element arrays for 8-14 μm observation», Infrared Technology XXI, SPIE Vol. 2552, pp. 785-790, 1995
2. C. M. Parry, «Bismuth-doped silicon : an extrinsic detector for long-wavelength infrared applications», Mosaic Focal Plane Methodologies, SPIE Vol. 244, pp. 2-8, 1980
3. D. L. Perry, E. L. Dereniak, «Linear theory of nonuniformity correction in infrared staring sensors», Optical Engineering, Vol. 32 No. 8, pp. 1854-1859, 1993