Source/drain formation using cobalt silicide as diffusion source for deep sub-micron nMOS

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3506, Issue , 1998, Pages 103-111

  Hu, J C ^a   Hong, Q Z ^a   Kittl, J A ^a   Rodder, M ^a   Chen, I C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

CoSi2; Diode leakage; nMOS; Shallow junction; Silicide as diffusion source

Indexed keywords

ANNEALING; COBALT COMPOUNDS; DIFFUSION; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

COBALT SILICIDE; DEEP SUB-MICRON PROCESS; INVERSE SHORT CHANNEL EFFECT; SILICIDE AS DIFFUSION SOURCE;

MOSFET DEVICES;

EID: 0038326941     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.323995     Document Type: Conference Paper

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