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Volumn 93, Issue 9, 2003, Pages 5091-5094

Dynamic mechanisms in photoluminescence of gallium-doped ZnSe grown by molecular-beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); GALLIUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE;

EID: 0038324449     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1563822     Document Type: Article
Times cited : (4)

References (16)
  • 8
    • 0037625985 scopus 로고    scopus 로고
    • Shanghai Institute of Technological Physics, Chinese Academy of Sciences, and references therein
    • S. Z. Wang, Design and Growth of II-VI Materials for Blue/Green Laser Diodes (Shanghai Institute of Technological Physics, Chinese Academy of Sciences, 1997), p. 74, and references therein.
    • (1997) Design and Growth of II-VI Materials for Blue/Green Laser Diodes , pp. 74
    • Wang, S.Z.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.