The effect of interfacial chemistry on metal ion penetration into polymeric films

Materials Research Society Symposium - Proceedings

Volumn 734, Issue , 2003, Pages 371-376

  Mallikarjunan, Anupama ^a   Juneja, Jasbir ^a   Yang, Guangrong ^a   Murarka, Shyam P ^a   Lu, Toh Ming ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; IONS; OXYGEN; PERMITTIVITY; SILICA; SURFACE CHEMISTRY; THERMAL STRESS;

METAL ION PENETRATION;

PLASTIC FILMS;

EID: 0038310983     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. SIA International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, 1999).(http://www.semichips.org)
2. D. K. Schroder, Semiconductor Material and Device Characterization 2nd Ed. (Wiley-Interscience, New York, 1998) pp.365-8.
3. M. W. Hillen and J. F. Verwey, Instabilities in Silicon Devices, Volume I, ed. G. Barbottin and A. Vapaille, (North Holland Elsevier Science Publishers, Netherlands, 1986), p. 416.
4. A. L. S. Loke, J. Wetzel, P. Townsend, T. Tanabe, R. Vrtis, M. Zussman, D. Kumar, C. Ryu, and S. Wong, IEEE Trans. Electron Devices 46, 2178 (1999).
5. A. Mallikarjunan, S. P. Murarka, and T.-M. Lu, Appl. Phys. Lett. 79, 1855 (2001).
6. A. Mallikarjunan, S. P. Murarka and T.-M. Lu, J. Electrochem. Soc. 149, F155 (2002).
7. A. Mallikarjunan, G.-R. Yang, S. P. Murarka and T.-M. Lu, J. Vac. Sci. Technol. B 20, 1884 (2002).
8. S. P. Murarka, Metallization: Theory and Practice for VLSI and ULSI (Butterworth-Heinemann, 1993), pp. 190-230.
9. D. Kapila and J. L. Plawsky, Chem. Eng. Sci. 50, 2589 (1995).
10. S. Rogojevic, A. Jain, W. Gill, and J. L. Plawsky, J. Electrochem. Soc. 149, F122 (2002).
11. T. Fukuda, H. Nishino, A. Matsuura, and H. Matsunaga, Jpn. J. Appl. Phys. 41, L537 (2002).