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Volumn 34, Issue 5-8, 2003, Pages 387-390

Electrorefractive properties of modified five-layer asymmetric coupled quantum well (FACQW)

Author keywords

Electrorefractive index change; Five layer asymmetric coupled quantum well; Thickness fluctuation

Indexed keywords

BINDING ENERGY; EXCITONS; GROUND STATE; MODULATORS; OPTICAL WAVEGUIDES; REFRACTIVE INDEX;

EID: 0038242822     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00031-4     Document Type: Conference Paper
Times cited : (3)

References (6)
  • 1
    • 0000604957 scopus 로고
    • Electric-field-induced refractive index changes in three-step asymmetric coupled quantum well
    • Susa N. Electric-field-induced refractive index changes in three-step asymmetric coupled quantum well. J. Appl. Phys. 73:(12):1993;8463-8470.
    • (1993) J. Appl. Phys. , vol.73 , Issue.12 , pp. 8463-8470
    • Susa, N.1
  • 2
    • 0032124077 scopus 로고    scopus 로고
    • Field-induced optical effect in a five-step asymmetric coupled quantum well with modified potential
    • Feng H., Pang J.P., Sugiyama M., Tada K., Nakano Y. Field-induced optical effect in a five-step asymmetric coupled quantum well with modified potential. IEEE J. Quantum Electron. 34:(7):1998;1197-1208.
    • (1998) IEEE J. Quantum Electron. , vol.34 , Issue.7 , pp. 1197-1208
    • Feng, H.1    Pang, J.P.2    Sugiyama, M.3    Tada, K.4    Nakano, Y.5
  • 3
    • 0034318575 scopus 로고    scopus 로고
    • Anomalous sharp dip of large field induced refractive index change in GaAs/AlGaAs five-layer asymmetric coupled quantum well
    • Arakawa T., Tada K., Kurosawa N., Noh J.-H. Anomalous sharp dip of large field induced refractive index change in GaAs/AlGaAs five-layer asymmetric coupled quantum well. Jpn. J. Appl. Phys. 39:(11):2000;6329-6333.
    • (2000) Jpn. J. Appl. Phys. , vol.39 , Issue.11 , pp. 6329-6333
    • Arakawa, T.1    Tada, K.2    Kurosawa, N.3    Noh, J.-H.4
  • 4
    • 0035246527 scopus 로고    scopus 로고
    • Influence of one monolayer thickness variation in GaAs/AlGaAs five-layer asymmetric coupled quantum well upon electrorefractive index change
    • Tada K., Arakawa T., Kazuma K., Kurosawa N., Noh J.-H. Influence of one monolayer thickness variation in GaAs/AlGaAs five-layer asymmetric coupled quantum well upon electrorefractive index change. Jpn. J. Appl. Phys. 40:(2A):2001;656-661.
    • (2001) Jpn. J. Appl. Phys. , vol.40 , Issue.2 A , pp. 656-661
    • Tada, K.1    Arakawa, T.2    Kazuma, K.3    Kurosawa, N.4    Noh, J.-H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.