Monte Carlo simulation of stored energy driven interface migration

Modelling and Simulation in Materials Science and Engineering

Volumn 11, Issue 3, 2003, Pages 307-319

  Radhakrishnan, B ^a   Zacharia, T ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEFORMATION; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; GRAIN GROWTH; GRAIN SIZE AND SHAPE; HAMILTONIANS; MATHEMATICAL MODELS; MONTE CARLO METHODS; RECRYSTALLIZATION (METALLURGY); TEMPERATURE;

CONSTANT INTERFACE MOBILITY; INTERFACE MIGRATION; INTERFACE VELOCITY; SURFACE ENERGY;

INTERFACES (MATERIALS);

EID: 0038240878     PISSN: 09650393     EISSN: None     Source Type: Journal    
DOI: 10.1088/0965-0393/11/3/304     Document Type: Article

References (7)

1. Srolovitz D J, Grest G S and Anderson M P 1986 Acta Metall. 34 1833
2. Radhakrishnan B and Zacharia T 2002 Modelling Simul. Mater. Sci. Eng. 8 737
3. Radhakrishnan B and Zacharia T 2002 Interface Sci. 10 171
4. Rollett A D and Raabe D 2001 Comput. Mater. Sci. 21 69
5. Humphreys F J 1997 Acta Mater. 45 4231
6. Humphreys F J and Hatherly M 1995 Recrystallization and Related Annealing Phenomena (Oxford: Pergamon)
7. Upmanya M, Hassold G M, Kazaryan A, Holm E A, Wang Y, Patton B and Srolovitz D J 2002 Interface Sci. 10 201