Thomas-Fermi-Dirac theory of the hole gas of a double p-type δ-doped GaAs quantum wells

Surface Science

Volumn 537, Issue 1-3, 2003, Pages 75-83

  Rodriguez Vargas, I ^a   Gaggero Sager, L M ^a,b   Velasco, V R ^b  

^a UNIVERSIDAD AUTÓNOMA DEL ESTADO DE MORELOS   (Mexico)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

Gallium arsenide; Quantum wells; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords

APPROXIMATION THEORY; DOPING (ADDITIVES); ELECTRIC CHARGE; ELECTRON ENERGY LEVELS; SEMICONDUCTING GALLIUM ARSENIDE;

EXCHANGE EFFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0038238147     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00546-6     Document Type: Article

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