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Volumn 38, Issue 6, 2002, Pages 576-581

Metalorganic chemical vapor deposition of antimony oxide films on semiconductor substrates

Author keywords

[No Author keywords available]

Indexed keywords

ALKYL GROUP; ANTIMONY BUTOXIDE; ANTIMONY DERIVATIVE; ANTIMONY OXIDE; ANTIMONY TRI BETA AMINOETHOXIDE; GALLIUM ARSENIDE; METAL COMPLEX; OXIDE; SILICON; TRIETHYLANTIMONY; TRIPROPYLANTIMONY; UNCLASSIFIED DRUG;

EID: 0038210968     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1015861418396     Document Type: Article
Times cited : (5)

References (15)
  • 2
    • 0018807460 scopus 로고
    • Interface Formation of Deposited Insulator Layers on GaAs and InP
    • Wilmsen, C.W., Kee, R.W., Wager, J.F., and Stunnard, I., Interface Formation of Deposited Insulator Layers on GaAs and InP, Thin Solid Films, 1979, vol. 64, no. 1, pp. 49-55.
    • (1979) Thin Solid Films , vol.64 , Issue.1 , pp. 49-55
    • Wilmsen, C.W.1    Kee, R.W.2    Wager, J.F.3    Stunnard, I.4
  • 3
    • 0004104767 scopus 로고
    • New York: Academic
    • Powell, C., Oxley, I., and Blocher, J., Jr., Vapor Deposition, New York: Academic, 1967. Translated under the title Osazhdenie iz gazovoi fazy, Moscow: Atomizdat, 1970.
    • (1967) Vapor Deposition
    • Powell, C.1    Oxley, I.2    Blocher Jr., J.3
  • 4
    • 3843057407 scopus 로고
    • Translated under the title Moscow: Atomizdat
    • Powell, C., Oxley, I., and Blocher, J., Jr., Vapor Deposition, New York: Academic, 1967. Translated under the title Osazhdenie iz gazovoi fazy, Moscow: Atomizdat, 1970.
    • (1970) Osazhdenie Iz Gazovoi Fazy


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.