Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing

Kristallografiya

Volumn 44, Issue 6, 1999, Pages 1106-1112

  Bublik, V T ^a   Shcherbachev, K D ^a   Komarnitskaya, E A ^a   Parkhomenko, Yu N ^a   Vygovskaya, E A ^a   Evgen'ev, S B ^a  

^a NONE

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Indexed keywords

EID: 0038192634     PISSN: 00234761     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. Chtcherbatcev K.D., Bublik V.T. // Inst. Phys. Conf. Ser. 1997. No 160. P. 187.
2. Wie C.R., Tombrello T.A., Vreeland T. // J. Appl. Phys., 1986. V. 59. No 11. P. 3743.
3. Ziegler J.F., Biersack J.P. The Stopping and Range of Ions in Solids. New York: Pergamon Press, 1985. 375 p.
4. Reyhaud F., Legres-deMauduit B. // Rad. Def. 1996. V. 88. No 12. P. 1.
5. Willis J.R., Bullough R., Stoneham A.M. // Phil. Mag. A. 1983. V. 48. No 1. P. 95.