Derivation of a kinetic/drift-diffusion model describing fast and slow particles;Dérivation de modèles couplés dérive-diffusion/cinétique par une méthode de décomposition en vitesse

Comptes Rendus Mathematique

Volumn 334, Issue 9, 2002, Pages 827-832

  Crouseilles, Nicolas ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038187582     PISSN: 1631073X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1631-073X(02)02306-3     Document Type: Article

References (6)

1. J. Ahn, C. Yao, H. Min, R. Dutton, Impact ionization modelling using simulation of high energy tail distributions, IEEE Electron Device Lett. 15 (9) (1994) 348-350.
2. N. Ben Abdallah, P. Degond, On a hierarchy of macroscopic models for semiconductors, J. Math. Phys. 37 (1997) 3306-3333.
3. S. Chapman, T.G. Cowling, The Mathematical Theory of Non-Uniform Gases, Cambridge University Press, New York, 1958.
4. P. Degond, Mathematical modeling of microelectronics semiconductor devices, in: AMS/IP Studies in Adv. Math., Vol. 15, AMS and International Press, 2000, pp. 77-110.
5. F. Poupaud, Diffusion approximation of the linear semiconductor equation: analysis of boundary layers, Asymptotic Anal. 4 (1991) 293-317.
6. P. Scrobohaci, T. Tang, Modeling of the hot electron subpopulation and its application to impact ionization in submicron silicon devices, IEEE Trans. Electron Devices 41 (7) (1994) 1197-1212.