SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 532-535, Issue , 2003, Pages 811-815

Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings

(5) Li, Yiming a,b Lu, Hsiao Mei c Voskoboynikov, O b,d Lee, C P b Sze, S M a,b

a NATIONAL NANO DEVICE LABORATORIES (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c UNIVERSITY OF ILLINOIS AT CHICAGO (United States)

d TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV (Ukraine)

Author keywords

Computer simulations; Gallium arsenide; Heterojunctions; Indium arsenide; Magnetic phenomena (cyclotron resonance, phase transitions, etc.); Quantum effects

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CYCLOTRON RESONANCE; ELECTRONIC DENSITY OF STATES; ELECTRONS; ENERGY GAP; HAMILTONIANS; HETEROJUNCTIONS; ITERATIVE METHODS; MAGNETIC FIELDS; MAGNETIC FLUX; QUANTUM INTERFERENCE PHENOMENA; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM RINGS;

NANOSTRUCTURED MATERIALS;

EID: 0038183821 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(03)00171-7 Document Type: Conference Paper

Times cited : (39)

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