Self-regulated four-phased charge pump with boosted wells

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn 1, Issue , 2003, Pages

  Shor, Joseph S ^a   Polansky, Yan ^a   Sofer, Yair ^a   Maayan, Eduardo ^a  

^a Saifun Semiconductors Ltd   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRIC LOADS; ELECTRIC POTENTIAL; TRANSISTORS;

CHARGE PUMPS;

ELECTRONIC EQUIPMENT;

EID: 0038158196     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. E. Maayan, R. Dvir, J.S. Shor, Y. Polansky, Y. Sofer, I. Bloom, D. Avni, B. Eitan, Z. Cohen, M. Meyassed, Y. Alpern, H. Palm, E. Stein, P. Halibach, D. Caspary, S. Reidel, and R. Knofler in "A 512Mb NROM Flash Data Storage Memory with 8MB/s Data rate", ISSCC 2002 Digest of Technical Papers, Publisher: Univ. of Toronto, Toronto, Canada, Feb. 2002.
2. A. Umezawa, S. Atsumi, M.Kuriyama, H. Banba, K. Imamiya, K. Naruke, S. Yamada, E. Obi, M. Oshikiri, T. Suzuki, and S. Tanaka in "A 5V-Only Operation 0.6um Flash EEPROM with Row Decoder Scheme in Triple-Well Structure", IEEE J. Solid State Circuits 27, 1549, Nov. 1992.
3. H. Chung and K. Suh in US Patent #5,982,224.
4. J. Shin, I. Chung, Y. Park, and H. Min in "A New Charge Pump Without Degradation in Threshold Voltage Due to Body Effect", IEEE J. Solid State Circuits 35, 1227