Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN

Journal of Applied Physics

Volumn 93, Issue 12, 2003, Pages 9730-9736

  Al Douri, Yarub ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CRYSTALLOGRAPHY; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; POSITRON ANNIHILATION SPECTROSCOPY; TERNARY SYSTEMS;

VIRTUAL CRYSTAL APPROXIMATION;

SEMICONDUCTOR MATERIALS;

EID: 0038143241     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1573739     Document Type: Article

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