In-situ microscopy study of nanocavity shrinkage in Si under on beam irradiation

EPJ Applied Physics

Volumn 23, Issue 1, 2003, Pages 39-40

  Ruault, M O ^a   Ridgway, M C ^b   Fortuna, F ^a   Bernas, H ^a   Williams, J S ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; IRRADIATION; SHRINKAGE; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

ION BEAM IRRADIATION; ION RADIATION EFFECTS; IRRADIATION-INDUCED ATOMIC DISPLACEMENT RATE; IRRADIATION-INDUCED NANOCAVITY SHRINKAGE;

AMORPHOUS SILICON;

EID: 0038115168     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2002120     Document Type: Article

References (11)

1. M. Bruel, Electron Lett. 31, 1201 (1995)
2. V. Raineri, U. Campisano, Nucl. Instrum. Methods Phys. Res. B 120, 56 (1996)
3. R. Kalyanaraman, T.E. Haynes, V.C. Venezia, D.C. Jacobson, H.-J. Gossmann, C.S. Rafferty, Appl. Phys. Lett. 76, 3379 (2000)
4. S.M. Myers, G.A. Petersen, Phys. Rev. B 57, 7015 (1998)
5. J. Wong-Leung, J.S. Williams, A. Kinomura, Y. Nakano, Y. Hayashi, D.J. Eaglesham, Phys. Rev. B 59, 7990 (1999)
6. R G. Elliman, J. S. Williams, in Materials Analysis Using Ion Beams, edited by J.R. Bird, J.S. Williams (Academic, Sydney, 1988), Chap. 4
7. J.S. Williams, M.C. Ridgway, M.J. Conway, J. Wong-Leung, X.F. Zhu, M. Petravic, F. Fortuna, M.-O. Ruault, H. Bernas, A. Kinomura, Y. Nakano, Y. Hayashi, Nucl. Instrum. Methods Phys. Res. B 178, 33 (2001)
8. J.S. Williams, X.F. Zhu, M.C. Ridgway, M.J. Conway, B.C. Williams, F. Fortuna, M.-O. Ruault, H. Bernas, Appl. Phys. Lett. 77, 4280 (2000)
9. X.F. Zhu, J.S. Williams, M.J. Conway, M.C. Ridgway, F. Fortuna, M.-O. Ruault, H. Bernas, Appl. Phys. Lett. 79, 3416 (2001)
10. M.-O. Ruault, J. Chaumont, H. Bernas, Nucl. Instrum. Methods B 209/210, 351 (1983)
11. J.F. Ziegler, J. Biersack, U. Littmark, The Stopping and Range of Ions in Solids (Pergamon Press, NY, 1996), http://www.srim.org