Spatially direct and indirect transitions observed for Si/Ge quantum dots

Applied Physics Letters

Volumn 82, Issue 26, 2003, Pages 4785-4787

  Larsson, M ^a   Elfving, A ^a   Holtz, P O ^a   Hansson, G V ^a   Ni, W X ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; GERMANIUM; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SILICON;

EMISSION ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038105315     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1587259     Document Type: Article

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