Shrinkage mechanism of nanocavities in amorphous Si under ion irradiation: An in situ study

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 912-915

  Ruault, M O ^a   Ridgway, M C ^b   Fortuna, F ^a   Bernas, H ^a   Williams, J S ^b  

^a CNRS   (France)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION IMPLANTATION; IRRADIATION;

ION IRRADIATION;

AMORPHOUS SILICON;

EID: 0038074362     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00860-7     Document Type: Conference Paper

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