Stoichiometry, morphology and structure of CdS layers grown on InP(1 0 0) from atomic sulfur beam generated from H2S gas and thermally evaporated Cd using molecular beam epitaxy

Journal of Crystal Growth

Volumn 255, Issue 1-2, 2003, Pages 1-7

  Choi, Joo Won ^a   Bhupathiraju, A ^a   Hasan, M A ^a   Lannon, John M ^b  

^a University of North Carolina at Charlotte   (United States)

^b NONE

Author keywords

A1. Crystal structure; A1. Surfaces; A3. Molecular beam epitaxy; A3. Physical vapor deposition processes; B1. Cadmium compounds; B2. Semiconducting II VI materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; EVAPORATION; HYDROGEN SULFIDE; INTERFACES (MATERIALS); IONIZATION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHYSICAL VAPOR DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; STOICHIOMETRY;

POWER DEVICES;

CADMIUM SULFIDE;

EID: 0038070297     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01150-3     Document Type: Article

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