Direct patterning of low-k hydrogen silsesquioxane using x-ray exposure technology

Electrochemical and Solid-State Letters

Volumn 6, Issue 5, 2003, Pages

  Chang, T C ^a,c   Tsai, T M ^b   Liu, P T ^c   Mor, Y S ^b   Chen, C W ^b   Sheu, J T ^d   Tseng, T Y ^b  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^d NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CROSSLINKING; CRYSTAL ORIENTATION; DEGRADATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; OPTICAL MICROSCOPY; PERMITTIVITY; PHOTORESISTS; SILICON WAFERS; SINGLE CRYSTALS; STRIPPING (REMOVAL); X RAY ANALYSIS;

DIRECT PATTERNING; HYDROGEN SILSESQUIOXANE; X RAY EXPOSURE TECHNOLOGY;

HYDROGEN INORGANIC COMPOUNDS;

EID: 0038035307     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1565854     Document Type: Article

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