A novel silicon detector for energetic electrons with improved linearity characteristics

Microelectronic Engineering

Volumn 67-68, Issue , 2003, Pages 140-148

  Von Borany, J ^a   Beyer, D ^b   Beyer, V ^a   Schmidt, B ^a   Schnabel, B ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Vistec Electron Beam GmbH   (Germany)

Author keywords

e Beam lithography; Electron detectors; High energy ion implantation; Linearity; Si technology

Indexed keywords

DETECTORS; ELECTRIC FIELD EFFECTS; ELECTRON BEAM LITHOGRAPHY; ION IMPLANTATION;

SILICON DETECTORS;

SEMICONDUCTOR JUNCTIONS;

EID: 0038020978     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00182-5     Document Type: Conference Paper

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