Silicon single-electron parametron cell for solid-state quantum information processing

Microelectronic Engineering

Volumn 67-68, Issue , 2003, Pages 755-762

  Emiroglu, E G ^a   Durrani, Z A K ^a   Hasko, D G ^a   Williams, D A ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

Author keywords

Parametron; Q Bit; Quantum information; Single electron

Indexed keywords

DATA PROCESSING; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; POLARIZATION; QUANTUM INTERFERENCE PHENOMENA; REACTIVE ION ETCHING; SILICON;

PARAMETRON CELLS;

ELECTRON DEVICES;

EID: 0038020065     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00190-4     Document Type: Conference Paper

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