A 0.8-dB insertion-loss, 17.4-dBm power-handling, 5-GHz transmit/receive switch with DETs in a 0.18-μm CMOS process

IEEE Electron Device Letters

Volumn 24, Issue 3, 2003, Pages 192-194

  Ohnakado, Takahiro ^a   Yamakawa, Satoshi ^a   Murakami, Takaaki ^a   Furukawa, Akihiko ^a   Nishikawa, Kazuyasu ^a   Taniguchi, Eiji ^a   Ueda, Hiroomi ^a   Ono, Masayoshi ^a   Tomisawa, Jun ^a   Yoneda, Yoshikazu ^a   Hashizume, Yasushi ^a   Sugahara, Kazuyuki ^a   Suematsu, Noriharu ^a   Oomori, Tatsuo ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

CMOS integrated circuits; Microwave circuits; Microwave devices; MOSFETS; Switches

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; INSERTION LOSSES; ION IMPLANTATION; MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SUBSTRATES;

DEPLETION-LAYER-EXTENDED TRANSISTOR; GROUND-SHIELDED PADS; JUNCTION CAPACITANCE; PUNCHTHROUGH STOPPER; SINGLE-POLE DOUBLE-THROW TRANSMIT-RECEIVE SWITCH;

MOSFET DEVICES;

EID: 0038005433     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.811404     Document Type: Letter

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