Effects of In2O3 on the properties of (Co, Nb)-doped SnO2 varistors

Journal of Physics D: Applied Physics

Volumn 36, Issue 8, 2003, Pages 1040-1043

  Wang, Wen Xin ^a   Wang, Jin Feng ^a   Chen, Hong Cun ^a   Su, Wen Bin ^a   Jiang, Bin ^b   Zang, Guo Zhong ^a   Wang, Chun Ming ^a   Qi, Peng ^a  

^a SHANDONG UNIVERSITY   (China)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; INDIUM COMPOUNDS; PERMITTIVITY; SEMICONDUCTOR DOPING; TIN COMPOUNDS;

LATTICE SITES;

VARISTORS;

EID: 0038004132     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/8/316     Document Type: Article

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