GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation

Journal of Applied Physics

Volumn 93, Issue 9, 2003, Pages 5140-5142

  Usov, I ^a,d   Parikh, N ^a   Kudriavtsev, Y ^b   Asomoza, R ^b   Reitmeier, Z ^c   Davis, R ^c  

^a UNIVERSITY OF NORTH CAROLINA   (United States)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

^c North Carolina State University   (United States)

^d LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ARGON; DIFFUSION; EVAPORATION; GALLIUM NITRIDE; PYROLYSIS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY;

TEMPERATURE DEPENDENCE;

ION IMPLANTATION;

EID: 0037986703     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564271     Document Type: Article

References (10)

1. S. O. Kucheyev, J. S. Williams, and S. J. Pearton, Mater. Sci. Eng., R. 33, 51 (2001), and references therein.
2. I. Usov, N. Parikh, D. Thomson, Z. Reitmeier, and R. Davis, Proceedings of the 201st Meeting of the Electrochemical Society, PV 2002-3, 198 (2002).
3. X. A. Cao et al., J. Electron. Mater. 28, 261 (1999).
4. S. Namba, K. Masuda, K. Gamo, A. Doi, S. Ishihara, and I. Kimura, Radiat, Eff. 6, 115 (1970).
5. H. Ryssel and I. Ruge, Ion Implantation (Wiley, New York, 1986), Chap. 3.8.2.
6. I. Usov, N. Parikh, D. Thomson, and R. Davis, Mater. Res. Soc. Symp, Proc. 693, I11.12.1 (2002).
7. N. Grandjean, J. Massies, F. Semond, S. Yu. Karpov, and R. A. Talalaev, Appl. Phys. Lett. 74, 1854 (1999).
8. O. Ambacher et al., J. Vac. Sci. Technol. B 14, 3532 (1996).
9. C. B. Vartuli, S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, and E. S. Lambers, J. Vac. Sci. Technol. B 14, 3523 (1996).
10. R. C. Schoonmaker, A. Buhl, and J. Lemley, J. Phys. Chem. 69, 3455 (1965).