Gate bias modulated current flow analysis at organic semiconductor / metal interface for developing high performance organic fet

Materials Research Society Symposium - Proceedings

Volumn 734, Issue , 2003, Pages 297-302

  Yoshida, Manabu ^a   Uemura, Sei ^a   Hoshino, Satoshi ^a   Kodzasa, Takehito ^a   Kamata, Toshihide ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); INTERFACES (MATERIALS); SEMICONDUCTING ORGANIC COMPOUNDS;

CURRENT FLOW ANALYSIS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0037973634     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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