Prospects of new technologies for power electronics in the 21st century

Proceedings of the IEEE Power Engineering Society Transmission and Distribution Conference

Volumn 2, Issue ASIA PACIFIC, 2002, Pages 1399-1404

  Akagi, Hirofumi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

FACTS controllers; Power conversion; Power electronics; Power semiconductor devices

Indexed keywords

COMPUTER SIMULATION; CONTROL EQUIPMENT; ELECTRIC INVERTERS; ELECTRIC TRANSFORMERS; GATES (TRANSISTOR); HVDC POWER TRANSMISSION; INSULATED GATE BIPOLAR TRANSISTORS; POWER CONVERTERS; POWER ELECTRONICS; PULSE WIDTH MODULATION; SEMICONDUCTOR DIODES; SOLID STATE RECTIFIERS; STATIC CONVERTERS; THYRISTORS;

INJECTION-ENHANCED GATE TRANSISTORS (IEGT);

ELECTRIC POWER SYSTEMS;

EID: 0037970507     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. H. Akagi, "Large Static Converters for Industry and Utility Applications," IEEE Proceedings, vol. 89, no. 6, pp. 976-983, June, 2001.
2. K. Tsukamoto, A. Kawakami and S. Mori, "Prospects of power devices in entering the 21st century," Mitsubishi Technical Journal, vol. 75, no. 6, pp. 376-384, June 2001 (in Japanese).
3. A. Nabae, I. Takahashi and H. Akagi, "A new neutral-point-clamped PWM inverter," IEEE Trans. Ind. Appli., vol. 17, no. 5, pp. 518-523, Sep./Oct., 1981.
4. K. Ichikawa, Y. Naito, and R. Nakajima, "High-voltage inverters employing IEGTs for industrial motor drive," Toshiba Review, vol. 55, no. 7, pp. 23-26, July, 2000 (in Japanese).
5. Infineon Technologies, "CoolMOS (SPW47N60C2) data sheet," May, 2000.
6. H. Lendenmann, F. Dahlquist, N. Johansson, J.P. Bergman, H. Bleichner and C. Ovrén, "Performance and reliability of high power SiC diodes," in Proceedings of the First International Workshop on Ultra-Low-Power Device Technology, pp. 125-130, Nara, Japan, May/June, 2000.
7. H. Lendenmann, A. Mukhitdinov, F. Dahlquist, H. Bleichner, M. Irwin, R. Söderholm and P. Skytt, "4.5W 4H-SiC diodes with ideal forward characteristic," in Proceedings of 2001 International Symposium on Power Semiconductor Devices & ICs, pp. 31-34, Osaka, Japan, June, 2001.
8. M. Hagiwara, H. Akagi and H. Fujita "Performance of a self-commutated BTB system under a single-line-to-ground fault condition," in Proceedings of the Power Conversion Conference, pp. 1124-1131, April, 2002.