Flat triode structure with a pulsed coplanar discharge channel representing similar features to a field-effect transistor

Applied Physics Letters

Volumn 82, Issue 17, 2003, Pages 2781-2783

  Sakai, Osamu ^a,b   Hashimoto, Satoshi ^a   Hatano, Akitsugu ^a  

^a SHARP CORPORATION   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES; ELECTRIC FIELD EFFECTS; ELECTRODES; INSULATION; PRESSURE EFFECTS;

COPLANAR DISCHARGES;

FIELD EFFECT TRANSISTORS;

EID: 0037959879     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1570510     Document Type: Article

References (6)

1. R. A. Street, Technology and Applications of Amorphous Silicon (Springer, Berlin, 2000).
2. A. Sobel, IEEE Trans. Plasma Sci. 19, 1032 (1991), and references therein.
3. R. H. Stark and K. H. Schoenbach, J. Appl. Phys. 85. 2075 (1999).
4. S. Goldberg and J. Rothstein, Adv. Electron. Electron Phys. 14, 207 (1961).
5. D. Turnquist, R. Caristi, S. Friedman, S. Merz, R. Plante, and N. Reinhardt, IEEE Trans. Plasma Sci. PS-8, 185 (1980).
6. A. von Engel, Ionized Cases (Clarendon, Oxford, 1965), p. 171.