Temperature dependence of electrical resistivity of the Al4SiC4 sintered bodies prepared by pulse electronic current sintering

Journal of the Ceramic Society of Japan

Volumn 111, Issue 1292, 2003, Pages 267-270

  Inoue, Koji ^a   Yamaguchi, Akira ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Al4SiC4; Aluminum silicon carbide; Carbide; Compound in the system Al Si C; Resistivity

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; POROSITY; SILICON CARBIDE; SINTERING; THERMAL EFFECTS;

ALUMINUM SILICON CARBIDE; PULSE ELECTRONIC CURRENT SINTERING; TEMPERATURE DEPENDENCE;

ALUMINUM COMPOUNDS;

EID: 0037903316     PISSN: 09145400     EISSN: None     Source Type: Journal    
DOI: 10.2109/jcersj.111.267     Document Type: Article

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