Fabrication and characterization of novel semiconductor nanomechanical structures

Surface Science

Volumn 532-535, Issue , 2003, Pages 1171-1176

  Yamaguchi, Hiroshi ^a   Hirayama, Yoshiro ^a,b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Atomic force microscopy; Gallium arsenide; Indium arsenide; Molecular beam epitaxy; Semiconductor semiconductor heterostructures

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; ETCHING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS;

SEMICONDUCTOR NANOMECHANICAL STRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 0037845264     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00116-X     Document Type: Conference Paper

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