Origin of N 1s spectrum in amorphous carbon nitride obtained by X-ray photoelectron spectroscopy

Thin Solid Films

Volumn 434, Issue 1-2, 2003, Pages 296-302

  Ohta, R ^a   Lee, K H ^a   Saito, N ^a   Inoue, Y ^a   Sugimura, H ^a   Takai, O ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Ab initio molecular orbital calculation; Amorphous carbon nitride; Arc ion plating; Vacuum ultra violet irradiation; X Ray photoelectron spectroscopy

Indexed keywords

CARBON NITRIDE; CHEMICAL BONDS; DIELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ARC ION PLATING;

AMORPHOUS MATERIALS;

EID: 0037843032     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00457-7     Document Type: Article

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