Effect of spin-orbit interaction in an InGaAs-based Aharonov-Bohm ring structure

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 18, Issue 1-3, 2003, Pages 143-144

  Nitta, Junsaku ^a   Koga, Takaaki ^a,b   Meijer, Frank E ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Aharonov Bohm structure; Spin interference; Spin orbit interaction

Indexed keywords

ELECTRIC POTENTIAL; HETEROJUNCTIONS; MAGNETORESISTANCE; OSCILLATIONS;

SPIN-ORBIT INTERACTION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0037842129     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)01052-4     Document Type: Conference Paper

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