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Volumn 87, Issue 8, 2000, Pages 3800-3805

Photothermal ionization spectroscopy of shallow nitrogen donor states in 4H-SiC

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0037822696     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372417     Document Type: Article
Times cited : (31)

References (34)
  • 2
    • 0003195308 scopus 로고    scopus 로고
    • SiC materials and devices
    • Academic, New York
    • Y. S. Park, "SiC materials and devices," Semiconductors and Semimetals (Academic, New York, 1998), Vol. 52.
    • (1998) Semiconductors and Semimetals , vol.52
    • Park, Y.S.1
  • 17
    • 84911730568 scopus 로고
    • V. I. Sidorov and T. M. Lifshits, Fiz. Tverd. Tela 8, 2498 (1966); Sov. Phys. Solid State 8, 2000 (1967).
    • (1967) Sov. Phys. Solid State , vol.8 , pp. 2000
  • 23
    • 84876819525 scopus 로고
    • V. N. Abakumov and I. N. Yassievich, Zh. Eksp. Teor. Fiz. 71, 657 (1976); Sov. Phys. JETP 44, 345 (1976).
    • (1976) Sov. Phys. JETP , vol.44 , pp. 345
  • 29
    • 0000595428 scopus 로고    scopus 로고
    • D. Volm et al., Phys. Rev. B 53, 15409 (1996).
    • (1996) Phys. Rev. B , vol.53 , pp. 15409
    • Volm, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.