Increased mobility anisotropy in selectively doped AlxGa1-xAs/GaAs heterostructures with high electron densities

Journal of Applied Physics

Volumn 88, Issue 1, 2000, Pages 321-325

  Reuter, D ^a   Versen, M ^a   Schneider, M D ^a   Wieck, A D ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037822506     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373660     Document Type: Article

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