|
|
|
Volumn , Issue , 2003, Pages 134-137
|
|
Effect of base thickness reduction on high speed characteristics and base resistance of InGaAs/InP heterojunction bipolar transistor
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
CURRENT DENSITY;
ELECTRIC CURRENTS;
ELECTRIC RESISTANCE MEASUREMENT;
ELECTRODES;
INTEGRATED OPTOELECTRONICS;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DOPING;
AMPLIFICATION;
CONTACT RESISTANCE;
CUTOFF FREQUENCY;
DOPING (ADDITIVES);
GALLIUM ARSENIDE;
GALLIUM PHOSPHIDE;
HETEROJUNCTIONS;
INDIUM;
INDIUM PHOSPHIDE;
TIME MEASUREMENT;
BASE RESISTANCE;
CURRENT GAIN;
THICKNESS REDUCTION;
HETEROJUNCTION BIPOLAR TRANSISTORS;
ACCESS RESISTANCE;
BASE TRANSIT TIME;
DOPING CONCENTRATION;
ELECTRICAL RESISTANCE MEASUREMENT;
FREQUENCY MEASUREMENTS;
INDIUM GALLIUM ARSENIDE;
MEASUREMENT METHODS;
THICKNESS REDUCTION;
|
|
EID: 0037810892
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
|
Times cited : (4)
|
|
References (7)
|
